BAV21 page: 1 frontier electronics corp. 667 e. cochran street, simi valley, ca 93065 tel: (805) 522-9998 fax: (805) 522-9989 e-mail: frontiersales@frontierusa.com web: http: //www.frontierusa.com silicon epitaxial planar diode BAV21 features z fast switching z small size mechanical data z case: glass, do35, dimensions in millimeters z leads: solderable per mil-std-202, method 208 z polarity: cathode indicated by color band z weight: 0.13 grams ratings symbol BAV21 units reverse voltage v r 250 v rectified current average half wave rectification with resist load at t amb 25 c and R 50hz note 1 i o 200 ma surge forward current at t 1 s and t j 25 c i fsm 1 a power dissipation at t amb =25 c note 1 p tot 400 mw junction temperature t j 175 c storage temperature range t s - 55 to + 175 c electrical characteristics (a t t a =25 c unless otherwise noted) characteristics symbol max units forward voltage at i f =100ma v f 1 v leakage current at v r =200v at v r =200v t j =100 c i r i r 100 15 na a capacitance at v f =v r =0 c tot 1.5 pf reverse recovery time from i f =30ma through i r =30ma to i r =3ma ; r l =100 t rr 50 ns thermal resistance junction to ambient air note 1 r tha 0.375 k / mw note: 1. leads kept at ambient temp. at 8mm length 0.52 ? 27.5 min 1.9 ? 3.9
BAV21 page: 2 ratings and characteristic curve BAV21 fig. 2-leakage current versus junction temperature 0 100 200 o c tj 100 10 1.0 0.1 0.01 i r fig. 1-forward characteristic ma 1000 100 10 1 0.1 0.01 i f 0 1.0 2.0 v f tj=25 o c ( a )
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